loading
  • Trang chủ
  • Sách, tuyển tập
  • The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature / Tran, Thi Hai
Sách, tuyển tập

The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature / Tran, Thi Hai

Tác giả : Tran, Thi Hai

Nhà xuất bản : H. : ĐHQGHN

Năm xuất bản : 2017

Tùng thư : Journal of Mathematics- Physics

Chủ đề : 1. mobility. 2. Single-side (1S) doing. 3. square quantum wells. 4. variational approach. 5. Article.

Chia sẻ

Thông tin chi tiết

Tóm tắt :

A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the dependence of the mobilities of carriers on the temperature. Our theory is able to well reproduce the recent experimental data on transport in 1S-doped square QWs, e.g., acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells.
Chia sẻ


Hiển thị MARC

 Thông tin dữ liệu nguồn

 Thư viện  Ký hiệu xếp giá  Dữ liệu nguồn
Đại học quốc gia Hà Nội
https://repository.vnu.edu.vn/handle/VNU_123/55379