Grain boundary resistivity of the percolative conduction regime in ruthenium doped manganates / Phung, ThanhPQ
Tác giả : Phung, ThanhPQ
Nhà xuất bản : Elsevier
Năm xuất bản : 2007
Chủ đề : 1. Ruthenates. 2. Article.
Thông tin chi tiết
Tóm tắt : | The excellent agreement with experimental data has been achieved in fitting the resistivity of doped manganate–ruthenates for whole temperature range. The analysis interpreted the resistivity in terms of percolation of carriers through the system of grain boundaries, having been assumed as the conductive fractal medium. The percolative conduction regime has been shown substantial for the K-doped ruthenates [H.N. Nhat, H.D. Chinh and M.H. Phan, Solid State Commun. 139 (2006) 456], and we confirm here that this approach also correctly discusses the unusual semiconductor-like behaviours of the doped manganate–ruthenates |
Thông tin dữ liệu nguồn
Thư viện | Ký hiệu xếp giá | Dữ liệu nguồn |
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Viện Tài nguyên và Môi trường - ĐHQGHN |
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https://repository.vnu.edu.vn/handle/VNU_123/10106 |